? 2009 ixys corporation, all rights reserved ds100170(7/09) ixth420n04t2 trencht2 tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 175 c40 v v dgr t j = 25 c to 175 c, r gs = 1m 40 v v gsm transient 20 v i d25 t c = 25 c (chip capability) 420 a i lrms lead current limit, rms 160 a i dm t c = 25 c, pulse width limited by t jm 1050 a i a t c = 25 c 200 a e as t c = 25 c 960 mj p d t c = 25 c 935 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13 / 10 nm/lb.in. weight 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 40 v v gs(th) v ds = v gs , i d = 250 a 1.5 3.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 10 a t j = 150 c 300 a r ds(on) v gs = 10v, i d = 100a, note 1 1.6 2.0 m v dss = 40v i d25 = 420a r ds(on) 2.0m features z international standard package z 175c operating temperature z high current handling capability z avalanche rated z fast intrinsic diode z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc/dc converters and off-line ups z primary- side switch z high current switching applications g = gate d = drain s = source tab = drain to-247 g d s (tab) advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixth420n04t2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s; duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 70 120 s c iss 19.7 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 3220 pf c rss 690 pf r gi gate input resistance 1.45 t d(on) 23 ns t r 27 ns t d(off) 70 ns t f 155 ns q g(on) 315 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 68 nc q gd 73 nc r thjc 0.16 c/w r thch 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 420 a i sm repetitive, pulse width limited by t jm 1680 a v sd i f = 100a, v gs = 0v, note 1 1.3 v t rr 74 ns i rm 2.7 a q rm 100 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 100a r g = 2 (external) i f = 150a, v gs = 0v -di/dt = 100a/ s v r = 20v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. e ? p to-247 (ixth) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2009 ixys corporation, all rights reserved ixth420n04t2 fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v ds - volts i d - amperes v gs = 10v 8v 6v 4v 5v fig. 3. output characteristics @ 150oc 0 50 100 150 200 250 300 350 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 6 v 4 v 5 v 3 v fig. 4. r ds(on) normalized to i d = 210a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 320a i d = 210a fig. 5. r ds(on) normalized to i d = 210a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 1. output characteristics @ 25oc 0 50 100 150 200 250 300 350 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 6v 4v 5v
ixys reserves the right to change limits, test conditions, and dimensions. ixth420n04t2 ixys ref: t_420n04t2(v8)7-15-09 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 40 80 120 160 200 240 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.30.40.50.60.70.80.91.01.11.2 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 280 320 q g - nanocoulombs v gs - volts v ds = 20v i d = 210a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 10 100 1,000 10,000 110100 v ds - volts i d - amperes 25s 100s 10ms 100ms dc r ds(on) limit t j = 175oc t c = 25oc single pulse 1ms external lead current limit
? 2009 ixys corporation, all rights reserved ixth420n04t2 fig. 14. resistive turn-on rise time vs. drain current 24 26 28 30 32 34 36 40 60 80 100 120 140 160 180 200 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 2 ? v gs = 10v v ds = 20v fig. 15. resistive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 280 320 360 2 4 6 8 10121416 r g - ohms t r - nanoseconds 10 20 30 40 50 60 70 80 90 100 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 20v i d = 200a, 100a fig. 16. resistive turn-off switching times vs. junction temperature 0 40 80 120 160 200 240 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 50 60 70 80 90 100 110 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 10v v ds = 20v i d = 100a i d = 200a fig. 17. resistive turn-off switching times vs. drain current 0 40 80 120 160 200 240 40 60 80 100 120 140 160 180 200 i d - amperes t f - nanoseconds 60 70 80 90 100 110 120 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 10v v ds = 20v t j = 125oc, 25oc fig. 13. resistive turn-on rise time vs. junction temperature 22 24 26 28 30 32 34 36 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 ? v gs = 10v v ds = 20v i d = 100a i d = 200a fig. 18. resistive turn-off switching times vs. gate resistance 0 100 200 300 400 500 600 246810121416 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 20v i d = 100a, 200a
ixys reserves the right to change limits, test conditions, and dimensions. ixth420n04t2 ixys ref: t_420n04t2(v8)7-15-09 fig. 19. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 19. maximum transient thermal impedance 0.20
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